离子束溅射-IBS解决方案

离子束溅射(IBS),也称为离子束沉积(IBD),是一种薄膜沉积工艺,使用离子源,将靶材(金属或电介质)沉积或溅射到基片上,以形成金属或电介质膜。因为离子束是等能的(离子具有相等的能量),且高度准直,所以与其他PVD(物理气相沉积)技术相比,其能够精确地控制厚度,并沉积非常致密的高质量薄膜。

IBD系统的典型配置是网格离子源、靶材和基片。离子束聚焦在靶材上,溅射的目标材料沉积在附近的基片上。通常的做法是,利用指向基片的第二网格离子源,提供离子辅助沉积(IAD)。在沉积金属氧化物或氮化物膜时,IAD非常有助于改善膜的物理密度、水分稳定性、光学和机械性能。此外,在沉积期间加热基片也可能改善整体性能。

离子辅助沉积

Ion Beam Sputtering


对化学计量和膜厚的出色控制

IBD的一个关键优势是可以独立控制多个参数,包括靶溅射速率和IAD参数—离子能量、离子电流密度和入射角,以控制薄膜化学计量和微观结构。这种控制水平是离子束和其他溅射工艺的主要区别,使得IBD成为精密光学或半导体生产等最具挑战性的应用的理想选择。

丹顿真空设备有限公司已经开发出离子束溅射解决方案,为优异的膜厚和均匀性控制提供稳定的沉积速率。有关详细信息和规格,请查看下面的IBD解决方案。


Ion Beam Etching

Ion beam etch (IBE) is an IBS process that can be used to pre-clean a substrate, or to create a specific pattern on the substrate’s surface using masking. Similar to other pre-clean methods, IBE completely removes particles from the substrate before deposition; it can also be used to remove a layer from the substrate surface itself to ensure excellent coating uniformity and adhesion.

IBE is an excellent option for materials and applications that require precise specs for material removal. It offers tight process control and repeatability for etching patterns onto a substrate, particularly for etching stacks of multiple materials or layers. As a pre-cleaning method, IBE features high-energy ions for a high-impact plasma treatment. By leveraging Denton Vacuum’s portfolio of Infinity ion beam products, you can achieve excellent uniformity and repeatability in a system that is fully equipped for high-volume production.


Ion Beam Sputtering Systems

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